DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, JH | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2013-03-03T05:03:59Z | - |
dc.date.available | 2013-03-03T05:03:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.71, pp.1846 - 1848 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77348 | - |
dc.description.abstract | Etching and passivation effects of hydrogen treatment of boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) film used as a p layer of p-i-n type amorphous silicon based solar cells using a mercury-sensitized photochemical vapor deposition method were investigated, For the hydrogen treatment of the p-layer film, longer p-layer deposition time was needed to obtain the same thickness as for no hydrogen treatment because of hydrogen etching effect, However, the cell performance was improved by similar to 7% due to an increase in the open circuit voltage (V-oc) and fill factor (FF) although the p-layer thickness was nearly identical in both cases, The increase in the V-oc and FF could be explained by an increase in the built-in potential due to a decrease in the film activation energy. Moreover, the electrical property improvement of the film was well explained by the passivation effect of a SiH2/SiH ratio decrease and a hydrogen content increase calculated from Fourier transformed infrared absorption measurements. (C) 1997 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SPECTROSCOPIC ELLIPSOMETRY | - |
dc.title | Etching and passivation effects on boron-doped amorphous silicon carbide p layer of amorphous silicon solar cell by hydrogen treatment using a mercury-sensitized photochemical vapor deposition method | - |
dc.type | Article | - |
dc.identifier.wosid | A1997XY99300034 | - |
dc.identifier.scopusid | 2-s2.0-0000899218 | - |
dc.type.rims | ART | - |
dc.citation.volume | 71 | - |
dc.citation.beginningpage | 1846 | - |
dc.citation.endingpage | 1848 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.119418 | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Jang, JH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SPECTROSCOPIC ELLIPSOMETRY | - |
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