Etching and passivation effects on boron-doped amorphous silicon carbide p layer of amorphous silicon solar cell by hydrogen treatment using a mercury-sensitized photochemical vapor deposition method

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dc.contributor.authorJang, JHko
dc.contributor.authorLim, Koeng Suko
dc.date.accessioned2013-03-03T05:03:59Z-
dc.date.available2013-03-03T05:03:59Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.71, pp.1846 - 1848-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/77348-
dc.description.abstractEtching and passivation effects of hydrogen treatment of boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) film used as a p layer of p-i-n type amorphous silicon based solar cells using a mercury-sensitized photochemical vapor deposition method were investigated, For the hydrogen treatment of the p-layer film, longer p-layer deposition time was needed to obtain the same thickness as for no hydrogen treatment because of hydrogen etching effect, However, the cell performance was improved by similar to 7% due to an increase in the open circuit voltage (V-oc) and fill factor (FF) although the p-layer thickness was nearly identical in both cases, The increase in the V-oc and FF could be explained by an increase in the built-in potential due to a decrease in the film activation energy. Moreover, the electrical property improvement of the film was well explained by the passivation effect of a SiH2/SiH ratio decrease and a hydrogen content increase calculated from Fourier transformed infrared absorption measurements. (C) 1997 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectSPECTROSCOPIC ELLIPSOMETRY-
dc.titleEtching and passivation effects on boron-doped amorphous silicon carbide p layer of amorphous silicon solar cell by hydrogen treatment using a mercury-sensitized photochemical vapor deposition method-
dc.typeArticle-
dc.identifier.wosidA1997XY99300034-
dc.identifier.scopusid2-s2.0-0000899218-
dc.type.rimsART-
dc.citation.volume71-
dc.citation.beginningpage1846-
dc.citation.endingpage1848-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.119418-
dc.contributor.localauthorLim, Koeng Su-
dc.contributor.nonIdAuthorJang, JH-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSPECTROSCOPIC ELLIPSOMETRY-
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