Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition

The fin field-effect transistor (FET) silicon nanocrystal floating gate memory using the photochemical vapor deposition and the plasma doping processes was proposed. The silicon nanocrystals with a uniform size were formed on a vertical sidewall surface of the fin channel by the photochemical vapor deposition. The plasma doping was applied to form the junctions at the sidewall of the fin source-drain extension regions with a high aspect ratio. The FinFET silicon nanocrystal floating gate memory with a gate length of 100 nm was successfully fabricated and it revealed a memory effect as well as a suppressed short-channel effect.
Publisher
AMER INST PHYSICS
Issue Date
2006-05
Language
ENG
Keywords

DEVICES

Citation

APPLIED PHYSICS LETTERS, v.88, no.22, pp.223502 -

ISSN
0003-6951
DOI
10.1063/1.2208268
URI
http://hdl.handle.net/10203/760
Appears in Collection
EE-Journal Papers(저널논문)
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