Erbium doping of silicon quantum structures

Cited 8 time in webofscience Cited 0 time in scopus
  • Hit : 406
  • Download : 0
The 1.54 mu m Er3+ photoluminescent properties of erbium doped silicon quantum structures are investigated. First, silicon-rich-silicon-oxide, which consists of silicon nanocrystals embedded in SiO2, is doped with erbium. Second, Er is doped into Si/SiO2 superlattice films, one with erbium in Si layers and the other with erbium in SiO2 layers. We find that in both cases, excitation of Er atoms is dominated by carrier recombinations, demonstrating efficient transfer of energy from Si quantum structures to Er3+ 4f electrons over several atomic distances. Furthermore, both the intensity and the luminescence Lifetimes of Er3+ luminescence undergo very little quenching between 20 K and 300 K with lifetimes that can be as long as 7.3 msec. These results demonstrate that suppression of temperature activation of non-radiative decay paths of excited Er3+ atoms by use of quantum structures has been achieved.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1999-04
Language
English
Article Type
Article; Proceedings Paper
Keywords

ER3+ LUMINESCENCE; DOPED SILICON; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; SEMICONDUCTORS; EXCITATION

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.16 - 20

ISSN
0374-4884
URI
http://hdl.handle.net/10203/75965
Appears in Collection
NT-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 8 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0