원통형 화학증착로에서 균일한 박막형성을 위한 입구 농도분포의 최적화 Optimization of inlet concentration condition for uniform film growth in a cylindrical CVD chamber

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An optimization procedure to find the inlet concentration profile that yields the most uniform deposition rate in a cylindrical CVD chamber has been developed. Assuming that the chemical reaction time is negligibly small, a SIMPLE based finite-volume method is adopted to solve the fully elliptic equations for momentum, temperature, and concentration. The inlet concentration profile is expressed by a linear combination of Chebyshev polynomials and the coefficients of which are determined by the local random search technique. It is shown that the present method is very effective in improving the uniformity of the deposition rate, especially when Re is high and/or the wafer is placed close to the inlet. The optimal profiles have been obtained for various Re, Gr, and geometry combinations.
Publisher
대한기계학회
Issue Date
1998-02
Language
Korean
Citation

대한기계학회논문집 B, v.22, no.2, pp.173 - 183

ISSN
1226-4881
URI
http://hdl.handle.net/10203/75604
Appears in Collection
ME-Journal Papers(저널논문)
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