MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

Abstract

We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et3BNH2(Bu-t), and triethylborane isopropylamine complex (TEBIPA), Et3BNH2(Pr-i) as a new single molecular precursors in the temperature range of 850 similar to 1000 degrees C. Polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 degrees C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 degrees C from TEBIPA. With increasing substrate temperatures to 1000 degrees C, however, BC4N-like species are strongly formed along with H-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of Et3BNH2(Bu-t) and Et3BNH2(Pr-i). High-resolution XPS and FTIR measurements were utilized as a good probes for identifying the crystal structure of BN films together with the XRD.