A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

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Thin gate oxides, irradiated under conditions similar to those experienced in X-ray lithography, exhibit a large increase in the leakage current. The current-voltage characteristics of the radiation-induced leakage current (RILC) and the electrical stress-induced leakage current (SILC) are very similar. Both currents comprise a de component due to trap-assisted tunneling, and a transient component attributed to the tunnel charging/discharging of carriers. Current-voltage and current-time data suggest essentially the same degradation mechanisms for both the RILC and SILC in ultra-thin oxides. A quadratic relationship between the X-ray dose and the equivalent charge fluence that induces the same amount of degradation is established. (C) 2000 Elsevier Science Ltd. All rights reserved.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2000-07
Language
English
Article Type
Article
Keywords

LITHOGRAPHY; DEPENDENCE; THICKNESS

Citation

SOLID-STATE ELECTRONICS, v.44, no.7, pp.1289 - 1292

ISSN
0038-1101
DOI
10.1016/S0038-1101(00)00037-X
URI
http://hdl.handle.net/10203/74672
Appears in Collection
EE-Journal Papers(저널논문)
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