DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Kim, SJ | ko |
dc.contributor.author | Ling, CH | ko |
dc.contributor.author | Joo, MS | ko |
dc.contributor.author | Yeo, IS | ko |
dc.date.accessioned | 2013-03-02T17:17:16Z | - |
dc.date.available | 2013-03-02T17:17:16Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-07 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.44, no.7, pp.1289 - 1292 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/74672 | - |
dc.description.abstract | Thin gate oxides, irradiated under conditions similar to those experienced in X-ray lithography, exhibit a large increase in the leakage current. The current-voltage characteristics of the radiation-induced leakage current (RILC) and the electrical stress-induced leakage current (SILC) are very similar. Both currents comprise a de component due to trap-assisted tunneling, and a transient component attributed to the tunnel charging/discharging of carriers. Current-voltage and current-time data suggest essentially the same degradation mechanisms for both the RILC and SILC in ultra-thin oxides. A quadratic relationship between the X-ray dose and the equivalent charge fluence that induces the same amount of degradation is established. (C) 2000 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | LITHOGRAPHY | - |
dc.subject | DEPENDENCE | - |
dc.subject | THICKNESS | - |
dc.title | A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation | - |
dc.type | Article | - |
dc.identifier.wosid | 000087297100026 | - |
dc.identifier.scopusid | 2-s2.0-0033750672 | - |
dc.type.rims | ART | - |
dc.citation.volume | 44 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 1289 | - |
dc.citation.endingpage | 1292 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/S0038-1101(00)00037-X | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.contributor.nonIdAuthor | Ling, CH | - |
dc.contributor.nonIdAuthor | Joo, MS | - |
dc.contributor.nonIdAuthor | Yeo, IS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | X-ray lithography | - |
dc.subject.keywordAuthor | ultra-thin gate oxide | - |
dc.subject.keywordAuthor | radiation-induced leakage current | - |
dc.subject.keywordAuthor | stress-induced leakage current | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | THICKNESS | - |
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