Optimization of the inlet velocity profile for uniform epitaxial growth in a vertical metalorganic chemical vapor deposition reactor

An optimization procedure is devised to find the inlet velocity profile that yields as uniform an epitaxial layer as possible in a vertical MOCVD reactor. It involves the solution of fully elliptic equations of motion, temperature, and concentration; the process is highly nonlinear and has been efficiently treated by breaking it into a series of linear problems. The optimal profile approximated by a 6th-degree Chebyshev polynomial is very successful in reducing the spatial non-uniformity of the growth rate. The optimization is particularly effective when the Reynolds number is high and the inlet-to-wafer distance becomes large. It is also found that a properly constructed inlet velocity profile can suppress the buoyancy driven secondary flow and improve the growth-rate uniformity. (C) 1999 Elsevier Science Ltd. All rights reserved.
Publisher
Pergamon-Elsevier Science Ltd
Issue Date
1999-11
Language
ENG
Keywords

STAGNATION POINT FLOW; TRANSPORT PHENOMENA; MOCVD REACTORS; MOVPE GROWTH

Citation

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, v.42, no.22, pp.4143 - 4152

ISSN
0017-9310
URI
http://hdl.handle.net/10203/74589
Appears in Collection
ME-Journal Papers(저널논문)
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