Electron-beam irradiation-induced gate oxide degradation

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Gate oxide degradation induced by electron-beam irradiation has been studied. A large increase in the low-field excess leakage current was observed on irradiated oxides and this was very similar to electrical stress-induced leakage currents. Unlike conventional electrical stress-induced leakage currents, however, electron-beam induced leakage currents exhibit a power law relationship with fluency without any signs of saturation. It has also been found that the electron-beam neither accelerates nor initiates quasibreakdown of the ultrathin gate oxide. Therefore, the traps generated by electron-beam irradiation do not contribute to quasibreakdown, only to the leakage current. (C) 2000 American Institute of Physics. [S0021-8979(00)06923-1].
Publisher
AMER INST PHYSICS
Issue Date
2000-12
Language
English
Article Type
Article
Keywords

INDUCED LEAKAGE CURRENT; MOS CAPACITORS; SOFT BREAKDOWN; SILICON-OXIDE; LAYERS; INJECTION; MODELS; LITHOGRAPHY; DEPENDENCE; SIO2-FILMS

Citation

JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6731 - 6735

ISSN
0021-8979
DOI
10.1063/1.1321030
URI
http://hdl.handle.net/10203/73905
Appears in Collection
EE-Journal Papers(저널논문)
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