DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Chong, PF | ko |
dc.contributor.author | Chor, EF | ko |
dc.contributor.author | Joo, MS | ko |
dc.contributor.author | Yeo, IS | ko |
dc.date.accessioned | 2013-03-02T14:10:27Z | - |
dc.date.available | 2013-03-02T14:10:27Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-12 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6731 - 6735 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73905 | - |
dc.description.abstract | Gate oxide degradation induced by electron-beam irradiation has been studied. A large increase in the low-field excess leakage current was observed on irradiated oxides and this was very similar to electrical stress-induced leakage currents. Unlike conventional electrical stress-induced leakage currents, however, electron-beam induced leakage currents exhibit a power law relationship with fluency without any signs of saturation. It has also been found that the electron-beam neither accelerates nor initiates quasibreakdown of the ultrathin gate oxide. Therefore, the traps generated by electron-beam irradiation do not contribute to quasibreakdown, only to the leakage current. (C) 2000 American Institute of Physics. [S0021-8979(00)06923-1]. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | INDUCED LEAKAGE CURRENT | - |
dc.subject | MOS CAPACITORS | - |
dc.subject | SOFT BREAKDOWN | - |
dc.subject | SILICON-OXIDE | - |
dc.subject | LAYERS | - |
dc.subject | INJECTION | - |
dc.subject | MODELS | - |
dc.subject | LITHOGRAPHY | - |
dc.subject | DEPENDENCE | - |
dc.subject | SIO2-FILMS | - |
dc.title | Electron-beam irradiation-induced gate oxide degradation | - |
dc.type | Article | - |
dc.identifier.wosid | 000165543200092 | - |
dc.identifier.scopusid | 2-s2.0-3343003132 | - |
dc.type.rims | ART | - |
dc.citation.volume | 88 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 6731 | - |
dc.citation.endingpage | 6735 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.1321030 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Chong, PF | - |
dc.contributor.nonIdAuthor | Chor, EF | - |
dc.contributor.nonIdAuthor | Joo, MS | - |
dc.contributor.nonIdAuthor | Yeo, IS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | INDUCED LEAKAGE CURRENT | - |
dc.subject.keywordPlus | MOS CAPACITORS | - |
dc.subject.keywordPlus | SOFT BREAKDOWN | - |
dc.subject.keywordPlus | SILICON-OXIDE | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | MODELS | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | SIO2-FILMS | - |
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