Poly(2-trimethyisilyl-2-propyl methacrylate) was synthesized and evaluated as a potential dry-developable chemically amplified photoresist. The deprotection of 2-trimethyllsilyl-2-propyl group of the polymer takes place in the exposed region after post-exposure bake. The difference of silicon content between the unexposed region and exposed regions is large enough to form patterns using oxygen reactive-ion etching. The etching selectivity of the unexposed region to the exposed region was 142. (C) 1998 Elsevier Science Ltd All rights reserved.