Synthesis of poly(2-trimethylsilyl-2-propyl methacrylate) and their application as a dry-developable chemically amplified photoresist

Poly(2-trimethyisilyl-2-propyl methacrylate) was synthesized and evaluated as a potential dry-developable chemically amplified photoresist. The deprotection of 2-trimethyllsilyl-2-propyl group of the polymer takes place in the exposed region after post-exposure bake. The difference of silicon content between the unexposed region and exposed regions is large enough to form patterns using oxygen reactive-ion etching. The etching selectivity of the unexposed region to the exposed region was 142. (C) 1998 Elsevier Science Ltd All rights reserved.
Publisher
ELSEVIER SCI LTD
Issue Date
1999-03
Language
ENG
Keywords

RESIST

Citation

POLYMER, v.40, no.6, pp.1617 - 1621

ISSN
0032-3861
DOI
10.1016/S0032-3861(98)00411-X
URI
http://hdl.handle.net/10203/73380
Appears in Collection
CH-Journal Papers(저널논문)
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