A Nano-Structure Memory with SOI Edge Channel and a Nano Dot

Abstract

We fabricated nano structure memory with silicon on insulator (SOI) edge channel and a nano dot. The width of the edge channel was determined by the thickness of the recessed rep-silicon layer of SOI wafer and the size of sidewall nano dot was determined by the reactive ion etching (RIE) etch and E-beam lithography. The memory has the threshold voltage shift of about 1 V for maximum programming voltage of 7 V and showed reasonable retention and endurance characteristics.