Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias

We have observed that excess low-field leakage currents generated by 10 keV X-ray irradiation in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after irradiation, regardless of the polarity of the applied gate bias. The reduction rate of radiation-induced leakage current (RILC) increased with the applied gate bias and began to saturate after 10(5) s. In addition, the reduction rate of RILC was significantly enhanced in a H-2 ambient, suggesting a strong link between the reduction of RILC and trapped-hole annealing.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
2000-07
Language
ENG
Keywords

SILICON DIOXIDE FILMS; INTERFACE; MECHANISM

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.39, no.7B, pp.757 - 759

ISSN
0021-4922
DOI
10.1143/JJAP.39.L757
URI
http://hdl.handle.net/10203/71466
Appears in Collection
EE-Journal Papers(저널논문)
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