DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ang, CH | ko |
dc.contributor.author | Ling, CH | ko |
dc.contributor.author | Cheng, ZY | ko |
dc.contributor.author | Kim, SJ | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-02-27T23:23:53Z | - |
dc.date.available | 2013-02-27T23:23:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-07 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.39, no.7B, pp.757 - 759 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/71466 | - |
dc.description.abstract | We have observed that excess low-field leakage currents generated by 10 keV X-ray irradiation in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after irradiation, regardless of the polarity of the applied gate bias. The reduction rate of radiation-induced leakage current (RILC) increased with the applied gate bias and began to saturate after 10(5) s. In addition, the reduction rate of RILC was significantly enhanced in a H-2 ambient, suggesting a strong link between the reduction of RILC and trapped-hole annealing. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | SILICON DIOXIDE FILMS | - |
dc.subject | INTERFACE | - |
dc.subject | MECHANISM | - |
dc.title | Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias | - |
dc.type | Article | - |
dc.identifier.wosid | 000088911500018 | - |
dc.identifier.scopusid | 2-s2.0-0033633826 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.issue | 7B | - |
dc.citation.beginningpage | 757 | - |
dc.citation.endingpage | 759 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.identifier.doi | 10.1143/JJAP.39.L757 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Ang, CH | - |
dc.contributor.nonIdAuthor | Ling, CH | - |
dc.contributor.nonIdAuthor | Cheng, ZY | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | thin oxide | - |
dc.subject.keywordAuthor | leakage current | - |
dc.subject.keywordAuthor | X-ray | - |
dc.subject.keywordAuthor | ionizing radiation | - |
dc.subject.keywordAuthor | MOS | - |
dc.subject.keywordPlus | SILICON DIOXIDE FILMS | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | MECHANISM | - |
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