Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

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A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide, The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2000-05
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.21, no.5, pp.254 - 255

ISSN
0741-3106
URI
http://hdl.handle.net/10203/70784
Appears in Collection
EE-Journal Papers(저널논문)
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