DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Asano, K | ko |
dc.contributor.author | Lindert, N | ko |
dc.contributor.author | Subramanian, V | ko |
dc.contributor.author | King, TJ | ko |
dc.contributor.author | Bokor, J | ko |
dc.contributor.author | Hu, CM | ko |
dc.date.accessioned | 2013-02-27T20:52:16Z | - |
dc.date.available | 2013-02-27T20:52:16Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-05 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.21, no.5, pp.254 - 255 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70784 | - |
dc.description.abstract | A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide, The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Ultrathin-body SOI MOSFET for deep-sub-tenth micron era | - |
dc.type | Article | - |
dc.identifier.wosid | 000086984700021 | - |
dc.identifier.scopusid | 2-s2.0-0033750493 | - |
dc.type.rims | ART | - |
dc.citation.volume | 21 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 254 | - |
dc.citation.endingpage | 255 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Asano, K | - |
dc.contributor.nonIdAuthor | Lindert, N | - |
dc.contributor.nonIdAuthor | Subramanian, V | - |
dc.contributor.nonIdAuthor | King, TJ | - |
dc.contributor.nonIdAuthor | Bokor, J | - |
dc.contributor.nonIdAuthor | Hu, CM | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | deep-sub-tenth micron | - |
dc.subject.keywordAuthor | gate work function engineering | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | raised poly-Si S/D | - |
dc.subject.keywordAuthor | short-channel effect | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordAuthor | SOI | - |
dc.subject.keywordAuthor | ultrathin-body | - |
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