Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

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dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorAsano, Kko
dc.contributor.authorLindert, Nko
dc.contributor.authorSubramanian, Vko
dc.contributor.authorKing, TJko
dc.contributor.authorBokor, Jko
dc.contributor.authorHu, CMko
dc.date.accessioned2013-02-27T20:52:16Z-
dc.date.available2013-02-27T20:52:16Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-05-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.21, no.5, pp.254 - 255-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/70784-
dc.description.abstractA 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide, The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleUltrathin-body SOI MOSFET for deep-sub-tenth micron era-
dc.typeArticle-
dc.identifier.wosid000086984700021-
dc.identifier.scopusid2-s2.0-0033750493-
dc.type.rimsART-
dc.citation.volume21-
dc.citation.issue5-
dc.citation.beginningpage254-
dc.citation.endingpage255-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorAsano, K-
dc.contributor.nonIdAuthorLindert, N-
dc.contributor.nonIdAuthorSubramanian, V-
dc.contributor.nonIdAuthorKing, TJ-
dc.contributor.nonIdAuthorBokor, J-
dc.contributor.nonIdAuthorHu, CM-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthordeep-sub-tenth micron-
dc.subject.keywordAuthorgate work function engineering-
dc.subject.keywordAuthorMOSFET-
dc.subject.keywordAuthorraised poly-Si S/D-
dc.subject.keywordAuthorshort-channel effect-
dc.subject.keywordAuthorSiGe-
dc.subject.keywordAuthorSOI-
dc.subject.keywordAuthorultrathin-body-
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