Comparison of the Pd/Ge/Au/Ni/Au and Pd/Ge/Pd/Ti/Au ohmic contacts to N-type InGaAs

Cited 1 time in webofscience Cited 0 time in scopus
  • Hit : 276
  • Download : 0
The Pd/Ge/Au/Ni/Au and Pd/Ge/Pd/Ti/Au ohmic contact systems on n-PnGaAs were investigated and compared. In both contacts, a good ohmic behavior was obtained even without annealing. This is due to their lower barrier height. The contact resistivity was further decreased by rapid thermal annealing. The Pd/Ge/Au/Ni/Au contact was degraded by intermixing of the ohmic metals with InGaAs above 425 degrees C. This indicates that the Ni layer could not act as a diffusion barrier in this contact system. The out-diffusion of the In and As atoms also deteriorated the ohmic contact due to both an increase in barrier height and charge compensation. The Pd/Ge/Pd/Ti/Au contact showed better ohmic behavior compared with the Pd/Ge/Au/Ni/Au contact, especially at high temperature. The Ti layer acted as the diffusion barrier. Non-spiking and planar interfaces were observed even at 450 degrees C.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1999-06
Language
ENG
Article Type
Article; Proceedings Paper
Keywords

ELECTRON-MOBILITY TRANSISTORS; GAAS

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.427 - 431

ISSN
0374-4884
URI
http://hdl.handle.net/10203/69773
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 1 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0