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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Molybdenum-gate HfO2 CMOS FinFET technology

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dc.contributor.authorHa, D.-
dc.contributor.authorTakeuchi, H.-
dc.contributor.authorChoi, Yang-Kyu-
dc.contributor.authorKing, T.-J.-
dc.contributor.authorBai, W.P.-
dc.contributor.authorKwong, D.-L.-
dc.contributor.authorAgarwal, A.-
dc.contributor.authorAmeen, M.-
dc.date.accessioned2007-06-27T07:03:44Z-
dc.date.available2007-06-27T07:03:44Z-
dc.date.created2012-02-06-
dc.date.issued2004-12-13-
dc.identifier.citationIEEE International Electron Devices Meeting, 2004 IEDM, v., no., pp.643 - 646-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10203/695-
dc.description.sponsorshipMARC0 Focus Center on Material, Structures, and Devices under contract 2001-MT-887.en
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleMolybdenum-gate HfO2 CMOS FinFET technology-
dc.typeConference-
dc.identifier.scopusid2-s2.0-21644434887-
dc.type.rimsCONF-
dc.citation.beginningpage643-
dc.citation.endingpage646-
dc.citation.publicationnameIEEE International Electron Devices Meeting, 2004 IEDM-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorHa, D.-
dc.contributor.nonIdAuthorTakeuchi, H.-
dc.contributor.nonIdAuthorKing, T.-J.-
dc.contributor.nonIdAuthorBai, W.P.-
dc.contributor.nonIdAuthorKwong, D.-L.-
dc.contributor.nonIdAuthorAgarwal, A.-
dc.contributor.nonIdAuthorAmeen, M.-
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