Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxide

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The quasibreakdown (QB) of ultrathin gate oxide under substrate hot-hole and -electron injection was investigated. It has been found that hot-carrier injection greatly degrades the immunity to the QB and the hot hole is more effective than the hot electron in the degradation. The phenomenon was explained by an interface damage-controlled mechanism and verified again by monitoring the interface state densities at the onset point of QB. It also has been found that QB occurs when the interface state density reaches a critical value, regardless of the stress current density and stressing carrier type. (C) 1999 American Institute of Physics. [S0021-8979(99)00523-X].
Publisher
AMER INST PHYSICS
Issue Date
1999-12
Language
English
Article Type
Article
Keywords

INTERFACE TRAPS; BREAKDOWN; SILICON

Citation

JOURNAL OF APPLIED PHYSICS, v.86, no.11, pp.6590 - 6592

ISSN
0021-8979
DOI
10.1063/1.371626
URI
http://hdl.handle.net/10203/69405
Appears in Collection
EE-Journal Papers(저널논문)
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