Physical Insights on Design and Modeling of Nanoscale FinFETs

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dc.contributor.authorChoi, Yang-Kyu-
dc.contributor.authorFossum, J.G.-
dc.contributor.authorChowdhury, M.M-
dc.contributor.authorTrivedi, V.P-
dc.contributor.authorKing, T.-J.-
dc.contributor.authorYu, B.-
dc.date.accessioned2007-06-27T06:59:40Z-
dc.date.available2007-06-27T06:59:40Z-
dc.date.created2012-02-06-
dc.date.issued2003-12-
dc.identifier.citationIEEE, v., no., pp.29.1.1 - 29.1.4-
dc.identifier.urihttp://hdl.handle.net/10203/693-
dc.description.sponsorshipSemiconductor Research Corporation and Motorola, Inc.en
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titlePhysical Insights on Design and Modeling of Nanoscale FinFETs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage29.1.1-
dc.citation.endingpage29.1.4-
dc.citation.publicationnameIEEE-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorFossum, J.G.-
dc.contributor.nonIdAuthorChowdhury, M.M-
dc.contributor.nonIdAuthorTrivedi, V.P-
dc.contributor.nonIdAuthorKing, T.-J.-
dc.contributor.nonIdAuthorYu, B.-

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