P and As implantation enhanced formation of metal-free oxide on WSi2

Cited 5 time in webofscience Cited 0 time in scopus
  • Hit : 421
  • Download : 0
We investigated the oxidation of crystallized tungsten silicide. We also researched the effects of preimplantation by P (or As) on the oxidation. Our results showed that the oxidation involved decomposition of the tungsten disilicide and consumption of the underlying polycrystalline silicon (polysilicon), consequently causing serious reliability problems. Cross-sectional transmission electron microscopy (XTEM) analysis showed that the oxide consisted of crystalline WO3 and amorphous SiO2, which was not removed completely using chemical solutions such as 100 : 1 HF and 7 : 1 buffered oxide etchant (BOE). However, P (or As) implantation prior to oxidation produced a SiO2 layer free of tungstem oxide, In particular, phosphorous implantation into silicide yielded a much thinner SiO2 layer on the silicide than As, which might be attributed to the presence of P2O5 in the oxide.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1997-12
Language
English
Article Type
Article
Keywords

ION-IMPLANTATION; FILMS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.12A, pp.7140 - 7145

ISSN
0021-4922
URI
http://hdl.handle.net/10203/69398
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 5 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0