DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JG | ko |
dc.contributor.author | Kim, JY | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Roh, JS | ko |
dc.contributor.author | Huh, JS | ko |
dc.date.accessioned | 2013-02-27T15:40:17Z | - |
dc.date.available | 2013-02-27T15:40:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-12 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.12A, pp.7140 - 7145 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/69398 | - |
dc.description.abstract | We investigated the oxidation of crystallized tungsten silicide. We also researched the effects of preimplantation by P (or As) on the oxidation. Our results showed that the oxidation involved decomposition of the tungsten disilicide and consumption of the underlying polycrystalline silicon (polysilicon), consequently causing serious reliability problems. Cross-sectional transmission electron microscopy (XTEM) analysis showed that the oxide consisted of crystalline WO3 and amorphous SiO2, which was not removed completely using chemical solutions such as 100 : 1 HF and 7 : 1 buffered oxide etchant (BOE). However, P (or As) implantation prior to oxidation produced a SiO2 layer free of tungstem oxide, In particular, phosphorous implantation into silicide yielded a much thinner SiO2 layer on the silicide than As, which might be attributed to the presence of P2O5 in the oxide. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | ION-IMPLANTATION | - |
dc.subject | FILMS | - |
dc.title | P and As implantation enhanced formation of metal-free oxide on WSi2 | - |
dc.type | Article | - |
dc.identifier.wosid | 000071543500009 | - |
dc.identifier.scopusid | 2-s2.0-0031354478 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 12A | - |
dc.citation.beginningpage | 7140 | - |
dc.citation.endingpage | 7145 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Lee, JG | - |
dc.contributor.nonIdAuthor | Kim, JY | - |
dc.contributor.nonIdAuthor | Roh, JS | - |
dc.contributor.nonIdAuthor | Huh, JS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | oxidation | - |
dc.subject.keywordAuthor | WSi2 | - |
dc.subject.keywordAuthor | P (or As) implantation | - |
dc.subject.keywordAuthor | metal-free oxide | - |
dc.subject.keywordPlus | ION-IMPLANTATION | - |
dc.subject.keywordPlus | FILMS | - |
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