Overestimation of Oxide Defects Density in Large Test Capacitors Due to Plasma Processing

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Oxide shorts density obtained from large test capacitors is found to bo higher than that in a multiple of separated small capacitors having the same total oxide area. The observed difference in failure rate is explained by the different oxide charging currents for the weak spots in the two devices during plasma processing. This experiment can explain the observed lower density of shorts after plasma processing in IC's, which is composed of many small devices, than in test structures which are large capacitors, Suggestions on the test structures are presented.
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
1997-09
Language
English
Article Type
Article
Keywords

DEPENDENCE; DAMAGE

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.44, no.9, pp.1554 - 1556

ISSN
0018-9383
URI
http://hdl.handle.net/10203/69138
Appears in Collection
RIMS Journal PapersEE-Journal Papers(저널논문)
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