HIGH-EFFICIENCY DELTA-DOPED AMORPHOUS-SILICON SOLAR-CELLS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION

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Amorphous Si solar cells with delta-doped (delta-doped) p-layer were prepared by a multichamber photochemical vapor deposition (photo-CVD) system. By optimizing the structure of the delta-doped p-layer, a conversion efficiency of 12.3% (AM1) was obtained for small-area solar cells with a delta-doped (AM1) was obtained for small-area solar cells with a delta-doped p-layer using B2H6 as a dopant source. The delta-doped p-layers deposited with trimethylboron (TMB) and triethylboron (TEB) as new boron sources were characterized. It was found that the boron layers obtained with TMB by photo-CVD contain a large amount of carbon atoms which degrade the solar cell performance. Carbon contamination was suppressed both by the plasma CVD method with a gas mixture of TMB, H2 and He and by the photo-CVD method with TEB.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1991-08
Language
English
Article Type
Article
Keywords

P-LAYER

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.30, no.8, pp.1635 - 1640

ISSN
0021-4922
DOI
10.1143/JJAP.30.1635
URI
http://hdl.handle.net/10203/67105
Appears in Collection
EE-Journal Papers(저널논문)
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