IN-SITU ANALYSIS OF IRRADIATION-INDUCED CRYSTAL NUCLEATION IN AMORPHOUS-SILICON - A MICROSCOPE FOR THERMODYNAMIC PROCESSES IN NUCLEATION

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Ion irradiation (600 keV Xe+ ) at high temperatures and [ow irradiation ion fluxes greatly enhances the nucleation rate of crystalline silicon in an amorphous matrix, but has a negligible effect on the growth rate of crystalline grains. In situ electron microscopy during ion irradiation was employed to quantitatively analyze transient and steady-state crystal nucleation. Termination of ion irradiation during transient nucleation produces changes in the nucleation rate that can best be accounted for by irradiation-induced modification of the thermodynamic barrier to crystal nucleation. Observation of irradiation-induced changes in the transient nucleation rate also enables evolution of the subcritical cluster distribution, which has to date defied direct observation, to be inferred.
Publisher
ELSEVIER SCIENCE BV
Issue Date
1993-06
Language
English
Article Type
Article; Proceedings Paper
Keywords

ION IRRADIATION; SI

Citation

NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.80-1, pp.973 - 977

ISSN
0168-583X
DOI
10.1016/0168-583X(93)90718-L
URI
http://hdl.handle.net/10203/66302
Appears in Collection
NT-Journal Papers(저널논문)
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