STRUCTURAL-PROPERTIES OF BATIO3 THIN-FILMS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

Ferroelectric BaTiO3 thin films were grown on Si(100) substrates at a temperature of 600-degrees-C by in situ metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy results suggested that the [110] direction of the BaTiO3 preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as-grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO3 epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.
Publisher
AMER INST PHYSICS
Issue Date
1993-02
Language
ENG
Keywords

ELECTRICAL-PROPERTIES; OXIDE-FILMS; SILICON; LAYERS

Citation

JOURNAL OF APPLIED PHYSICS, v.73, no.3, pp.1547 - 1549

ISSN
0021-8979
URI
http://hdl.handle.net/10203/63271
Appears in Collection
MS-Journal Papers(저널논문)
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