STRUCTURAL-PROPERTIES OF BATIO3 THIN-FILMS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

Abstract

Ferroelectric BaTiO3 thin films were grown on Si(100) substrates at a temperature of 600-degrees-C by in situ metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy results suggested that the [110] direction of the BaTiO3 preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as-grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO3 epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.