THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Kee-Joo | ko |
| dc.contributor.author | CHADI, DJ | ko |
| dc.date.accessioned | 2013-02-24T13:56:45Z | - |
| dc.date.available | 2013-02-24T13:56:45Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988-04 | - |
| dc.identifier.citation | PHYSICAL REVIEW LETTERS, v.60, no.14, pp.1422 - 1425 | - |
| dc.identifier.issn | 0031-9007 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57631 | - |
| dc.language | English | - |
| dc.publisher | AMERICAN PHYSICAL SOC | - |
| dc.title | THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1988M727300020 | - |
| dc.identifier.scopusid | 2-s2.0-0000495265 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 60 | - |
| dc.citation.issue | 14 | - |
| dc.citation.beginningpage | 1422 | - |
| dc.citation.endingpage | 1425 | - |
| dc.citation.publicationname | PHYSICAL REVIEW LETTERS | - |
| dc.identifier.doi | 10.1103/PhysRevLett.60.1422 | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | CHADI, DJ | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
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