비소화 갈륨의 선택적 액상 에피층 성장 ;성장기구 및 형태 Selective Liquid Phase Epitaxy of GaAs ; Kinetics and Morphology

Publisher
대한전자공학회
Issue Date
1986-11
Language
KOR
Citation

전자공학회지, v.23, no.6, pp.820 - 832

ISSN
1975-2377
URI
http://hdl.handle.net/10203/57225
Appears in Collection
EE-Journal Papers(저널논문)
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