DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김상배 | ko |
dc.contributor.author | 권영세 | ko |
dc.date.accessioned | 2013-02-24T12:43:51Z | - |
dc.date.available | 2013-02-24T12:43:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1986-11 | - |
dc.identifier.citation | 전자공학회지, v.23, no.6, pp.820 - 832 | - |
dc.identifier.issn | 1975-2377 | - |
dc.identifier.uri | http://hdl.handle.net/10203/57225 | - |
dc.language | Korean | - |
dc.publisher | 대한전자공학회 | - |
dc.title | 비소화 갈륨의 선택적 액상 에피층 성장 ;성장기구 및 형태 | - |
dc.title.alternative | Selective Liquid Phase Epitaxy of GaAs ; Kinetics and Morphology | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 23 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 820 | - |
dc.citation.endingpage | 832 | - |
dc.citation.publicationname | 전자공학회지 | - |
dc.contributor.localauthor | 권영세 | - |
dc.contributor.nonIdAuthor | 김상배 | - |
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