Fabrication of nanodevice using individual single crystalline nanowire and their physical property measurements

Abstract

Nanodevices using individual nanowire are fabricated by standardl e-beam lithography, which includes plasma ashing, evaporation of metal electrodes, and rapid thermal annealing. With as-product nanodevice, we obtained the resistance under not only various temperatures but also the external magnetic field. The nanowires used in the nanodevices for the measurement of physical properties are as follows; CoSi, $Fe_{1-x}Co_xSi$, InN, $Fe_5Si_3, Co_2Si$, and $V_5Si_3$. As a result, CoSi nanowire shows the significant negative magnetoresistance (MR) effect, which is consistent with reduction of scattering by spins associated with localized electrons. We obtain the specific properties of $Fe_{1-x}Co_xSi$ nanowire under the influence with magnetic field, low temperature, and direction between nanowire and applied magnetic field; positive MR, transition point, and anisotropy MR (AMR). Temperature-dependent resistance of InN nanowire is revealed how electrons on the surface of InN nanowire can be transferred at different temperature regions. Also, we calculate the resistivity of $Fe_5Si_3, Co_2Si$, and $V5Si_3$ nanowire using measured resistance and parameter of nanodevices and obtain that $Fe_5Si_3$ nanowire shows positive MR at low temperature, $Co_2Si$ nanowire has a little negative MR below Curie temperature, and current flows without breakdown point at high voltage in $V_5Si_3$ nanowire.