DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Lee, Choo-Chon | - |
dc.contributor.advisor | 이주천 | - |
dc.contributor.author | Kim, Yong | - |
dc.contributor.author | 김용 | - |
dc.date.accessioned | 2011-12-14T07:31:19Z | - |
dc.date.available | 2011-12-14T07:31:19Z | - |
dc.date.issued | 1991 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=61631&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/47811 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 물리학과, 1991.2, [ vii, 153, 6 p. ] | - |
dc.description.abstract | The characterizations of superlattices and delta-doped epi-layers grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) have been investigated. As an basic study, the electrical properties of n-$Al_xGa_{1-x}AS$ ($0<X<0.45$) simple epi-layers have been studies utilizing a temperature dependent $15K<T<300K$) Hall-effect measurement. In addition the general properties of the persistent photoconductivity effect in $Al_xGa_{1-x}As$ alloys ($X>0.2$) due to deep DX center have been investigated. The anomalous conduction band density of states which can be found in the course of the anayses of the Hall-effect measurement results, has been confirmed. Moreover, the physical origin for this anomaly was also discussed. On the basis of this basic study, the growth technology of GaAs/AlGaAs superlattices and modulation doped heterostroctures has been studied. By the proper undestandings of flow patern during growth and design parameters of a reactor, it was proven using photoluminescence, double crystal x-ray diffraction, Hall-effect, C-V profiling and quantum-Hall effect measurements, that the successful growth of these novel structures was possible by MOCVD. The growth technology has been extended to the study of delta-doping which is arised as a novel doping technique and is mainly done by MBE. Although the growth temperatures for delta-doped layer by MOCVD is as higher as $150\,^\circ\!C$ than those of MBE, it was found utlizing C-V profiling, Hall-effect and Shubnikov de Haas (SdH) measurements, that the excellent delta-doping profiles were resulted. This excellent result implies and additional diffusion limiting mechanism which is absent in MBE growth. One possible model for this mechanism is suggested. In addition, a perliminary delta-FET has been fabricated to see the feasibliity of the application. The GaAs-on-Si technology which has been drawn much attentions due to its commercial utility has been studied. To reduce the dislocation density, i... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.title | Characterizations of GaAs/AlAs superlattices and delta-doped epi-layers grown by MOCVD | - |
dc.title.alternative | MOCVD 로 성장한 GaAs/AlGaAs 초격자 및 delta doping 한 에피층의 특성연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 61631/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 000835079 | - |
dc.contributor.localauthor | Kim, Yong | - |
dc.contributor.localauthor | 김용 | - |
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