Printed thin-film transistors and complementary logic gates that use polymer-coated single-walled carbon nanotube networks

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This paper reports on the electrical properties of thin-film transistors (TFTs) that use polymer-coated networks of single-walled carbon nanotubes (SWNTs) as the semiconductor with source and drain electrodes formed by high-resolution printing techniques. P-channel, n-channel, and ambipolar TFTs are demonstrated with bare SWNT networks, networks coated with polyethylene imine and with polyethylene oxide, respectively. Studies of the scaling of properties with channel length and tube density reveal important information about the operation of these devices. Complementary inverters made with n- and p-channel devices show gain larger than one and illustrate the potential use of these types of TFTs for complex logic circuits.
Publisher
AMER INST PHYSICS
Issue Date
2005-12
Language
ENG
Article Type
Article
Keywords

ALIGNED ARRAYS; FUNCTIONALIZATION; CHEMISTRIES

Citation

JOURNAL OF APPLIED PHYSICS, v.98, no.11, pp.11376 - 11384

ISSN
0021-8979
DOI
10.1063/1.2135415
URI
http://hdl.handle.net/10203/4394
Appears in Collection
CBE-Journal Papers(저널논문)
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