High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier

We report a high-response normal-incidence infrared photodetector based on the bound-to-continuum transition fabricated on the self-assembled i-InAs/n-GaAs quantum-dot (QD) heterostructure doped in GaAs barrier with no current blocking barrier. The photoresponse characteristics have been confirmed by distinct methods using a SiC globar source and a blackbody radiation source. From the blackbody system, the responsivity of 1750 mA/W at a peak wavelength of similar to4.7 mum (21 K) has been achieved, which is much higher than that reported on the n-InAs/i-GaAs QD-based infrared photodetectors doped in QDs with additional barrier.
Publisher
Japan Soc Applied Physics
Issue Date
2004-03
Language
ENG
Keywords

ROOM-TEMPERATURE; DETECTORS; OPERATION; LAYER

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.3, pp.1218 - 1220

ISSN
0021-4922
DOI
10.1143/JJAP.43.1218
URI
http://hdl.handle.net/10203/3922
Appears in Collection
EE-Journal Papers(저널논문)
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