DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SJ | ko |
dc.contributor.author | Noh, SK | ko |
dc.contributor.author | Choe, JW | ko |
dc.contributor.author | Lee, UH | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.contributor.author | Lee, JI | ko |
dc.date.accessioned | 2008-04-16T09:57:49Z | - |
dc.date.available | 2008-04-16T09:57:49Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-03 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.3, pp.1218 - 1220 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3922 | - |
dc.description.abstract | We report a high-response normal-incidence infrared photodetector based on the bound-to-continuum transition fabricated on the self-assembled i-InAs/n-GaAs quantum-dot (QD) heterostructure doped in GaAs barrier with no current blocking barrier. The photoresponse characteristics have been confirmed by distinct methods using a SiC globar source and a blackbody radiation source. From the blackbody system, the responsivity of 1750 mA/W at a peak wavelength of similar to4.7 mum (21 K) has been achieved, which is much higher than that reported on the n-InAs/i-GaAs QD-based infrared photodetectors doped in QDs with additional barrier. | - |
dc.description.sponsorship | This work was supported in part by MOIC (Contract No. IMT2000-B4-1), and mainly carried out at the National Research Laboratory on Quantum Dot Technology at KRISS designated by MOST (Contract No. M1-0104-00-0127). One of the authors (SKN) acknowledges the partial support provided by KOSEF through the Quantum-Functional Semiconductor Research Center at Dongguk University in 2003. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Japan Soc Applied Physics | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | DETECTORS | - |
dc.subject | OPERATION | - |
dc.subject | LAYER | - |
dc.title | High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier | - |
dc.type | Article | - |
dc.identifier.wosid | 000220640700074 | - |
dc.identifier.scopusid | 2-s2.0-2442600506 | - |
dc.type.rims | ART | - |
dc.citation.volume | 43 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 1218 | - |
dc.citation.endingpage | 1220 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.identifier.doi | 10.1143/JJAP.43.1218 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Lee, SJ | - |
dc.contributor.nonIdAuthor | Noh, SK | - |
dc.contributor.nonIdAuthor | Choe, JW | - |
dc.contributor.nonIdAuthor | Lee, UH | - |
dc.contributor.nonIdAuthor | Lee, JI | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | indium arsenide | - |
dc.subject.keywordAuthor | quantum dot | - |
dc.subject.keywordAuthor | infrared photodetector | - |
dc.subject.keywordAuthor | responsivity | - |
dc.subject.keywordAuthor | detectivity | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | DETECTORS | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | LAYER | - |
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