Design and implementation of gigabit CMOS transimpedance amplifier for high-speed optical receiver applications고속 광 수신기 응용을 위한 Gigabit CMOS Transimipedance amplifier의 설계 및 구현

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As the industry is growing up, it has led to the necessity of high volume data processing with high speed. With that flow, the exponential growth of the demands of internet, which requires the volume of the data transported on the backbone, has increases. To satisfy the requested capacity and speed, the transmission media has been converged to optical fibers. Even though there have been many research efforts to solve the demands through system approaches such as wave-division multiplexing (WDM), the bottleneck is the electrical chips which form the system. In the electrical chip domain, integration of high-speed analog functions and digital logic on a single chip or the system-on-chip (SoC) is becoming main-stream because it achieves low system power and small size. However, the SoC has intrinsic and fatal problem of substrate coupling noise between high fidelity analog circuits and noisy digital logic through the common silicon substrate. To satisfy all conditions mentioned above, solution for digital noise, as well as high speed, is required. In this thesis, design and implementation of gigabit CMOS transimpedance amplifier (TIA) for high-speed optical receiver application is described. In addition, to the intrinsic and fatal problem of system-on-chip (SoC) induced by substrate coupling noise between high fidelity analog circuits and noisy digital logic through the common silicon substrate, the approach to one-chip solution with digital noise free is proposed, implemented and verified with measurement. A 1.25Gbps 80dBΩ fully differential transimpedance amplifier is implemented using 0.25㎛ CMOS and MCO (Multi-Chip-on-Oxide) process. MCO enables the integration of photodiode, TIA and planar inductors of Q=21.1 for shunt peaking on a oxidized silicon substrate. Its input noise current, inter-channel crosstalk and power dissipation are 0.13μA, <-40dB and 27mW, respectively. The chip size of MCO and TIA are 5×5㎟ and 0.13×0.17㎟, respectively.
Advisors
Yoo, Hoi-Junresearcher유회준researcher
Description
한국과학기술원 : 전기및전자공학전공,
Publisher
한국과학기술원
Issue Date
2002
Identifier
174046/325007 / 020003415
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2002.2, [ [viii], 79 p. ]

Keywords

Optical Interconnect; CMOS; Design and Implementation; Transimpedance amplifier; Optical Receiver; Transimpedance amplifier; 설계 및 구현; CMOS; 광 수신기; 고속

URI
http://hdl.handle.net/10203/37516
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=174046&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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