Etched profiles of SiO2 Layer

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Etched-edge profile equations of SiO2 in a double layer of fast- and slow-etching SiO2 layer have been derived using Fermat's principle of least time. Etched profiles obtained from the SEM (scanning electron microscope) micrographs for experimental samples show reasonable agreement with calculated profiles.
Publisher
Inst Engineering Technology-Iet
Issue Date
1981-03
Language
English
Citation

ELECTRONICS LETTERS, v.17

ISSN
0013-5194
URI
http://hdl.handle.net/10203/3202
Appears in Collection
EE-Journal Papers(저널논문)
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