Etched profiles of SiO2 Layer
Etched-edge profile equations of SiO2 in a double layer of fast- and slow-etching SiO2 layer have been derived using Fermat's principle of least time. Etched profiles obtained from the SEM (scanning electron microscope) micrographs for experimental samples show reasonable agreement with calculated profiles.
- Publisher
- Inst Engineering Technology-Iet
- Issue Date
- 1981-03
- Language
- English
- Citation
ELECTRONICS LETTERS, v.17
- ISSN
- 0013-5194
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
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