Metal chalcogenide, silicide, and oxide nanostructures : synthesis, stress dependent phase transition and raman analysis금속 칼코겐화물, 규화물, 산화물 나노구조 : 합성, 응력 의존적 상전이, 라만 분석

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In this study, we investigate the synthesis, stress-dependent phase transitions and Raman analysis of metal chalcogenide $(Ag_2Te)$, silicide $(V_5Si_3)$ and oxide $(Bi_2O_3)$ nanostructures. First, we prepare the cross-section of laterally epitaxial single crystalline $Ag_2Te$ nanowires (NWs) and observe that stress energy can assist the phase transition by stabilizing the high temperature, without going through the intermediate-temperature phase. Second, we control the reaction time and temperature gradient in chemical vapor deposition and obtain the $V_5Si_3$ nanotubes (NTs) and NWs. Third, we employ the polarized Raman single NW spectroscopy for identifying the growth direction and shape effect in the α and $β-Bi_2O_3$ NWs, respectively In chapter 1, we demonstrate synthesis and new phase transitions of single crystalline $Ag_2Te$ NWs. Laterally epitaxial single crystalline $Ag_2Te$ NWs are synthesized on sapphire substrates by the vapor transport method. We observed the phase transitions of these $Ag_2Te$ NWs via in-situ transmission electron microscopy (TEM) after covering them with Pt layers. The constrained NW shows phase transition from monoclinic to a body-centered cubic (BCC) structure near the interfaces, which is ascribed to the thermal stress caused by differences in the thermal expansion coefficients. Furthermore, we observed the nucleation and growth of BCC phase penetrating into the face-centered cubic matrix at 200 ℃ by high resolution TEM in real time. Our results would provide valuable insight into how compressive stresses imposed by overlayers affect behaviors of nanodevices. In chapter 2, we report the morphology control of vanadium silicide nanostructures. Free-standing hexagonal $V_5Si_3$ nanostructures are grown on a vanadium foil substrate placed on Si powder by a chemical vapor deposition. By controlling the reaction time and substrate temperature, we have succeeded in morphology tuning of $V_5Si_3$ NTs and NWs. When the downstr...
Advisors
Kim, Bong-Sooresearcher김봉수researcher
Description
한국과학기술원 : 화학과,
Publisher
한국과학기술원
Issue Date
2011
Identifier
466510/325007  / 020065872
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 화학과, 2011.2, [ x, 85 p. ]

Keywords

Morphology control; In-situ TEM; V5Si3; Ag2Te; polarized Raman single NW; 편광된 라만 단일 나노선; 형태 조절; 직접관찰 투과전자현미경; 바나듐 규화물; 은텔루르화물

URI
http://hdl.handle.net/10203/31774
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=466510&flag=dissertation
Appears in Collection
CH-Theses_Ph.D.(박사논문)
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