Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier

As a boron diffusion barrier, a 20 nm-thick Si0.8Ge0.2 layer was successfully utilized in n-channel MOSFETs for implementing a retrograded well structure. Compared with the conventional Si CMOS process, the developed n-channel MOSFFT process provides an enhanced transconductance (7%) and lower sub-threshold swing which is nearly unchanged even at an increased drain-source voltage. Especially, because sub-threshold leakage current is one of the key issues in the MOS device scaling due to reduced threshold voltage, the usage of a Si0.8Ge0.2 layer in n-channel MOSFET was verified to be useful for low power and high performance even under aggressive scaling constraints. (C) 2004 Elsevier Ltd. All rights reserved.
Publisher
ELSEVIER SCI LTD
Issue Date
2004-08
Language
ENG
Keywords

CMOS DEVICES

Citation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.7, no.4-6, pp.375 - 378

ISSN
1369-8001
URI
http://hdl.handle.net/10203/3175
Appears in Collection
EE-Journal Papers(저널논문)
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