DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mheen, B | ko |
dc.contributor.author | Song, YJ | ko |
dc.contributor.author | Kang, JY | ko |
dc.contributor.author | Shim, KH | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.date.accessioned | 2008-02-25T05:58:43Z | - |
dc.date.available | 2008-02-25T05:58:43Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-08 | - |
dc.identifier.citation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.7, no.4-6, pp.375 - 378 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3175 | - |
dc.description.abstract | As a boron diffusion barrier, a 20 nm-thick Si0.8Ge0.2 layer was successfully utilized in n-channel MOSFETs for implementing a retrograded well structure. Compared with the conventional Si CMOS process, the developed n-channel MOSFFT process provides an enhanced transconductance (7%) and lower sub-threshold swing which is nearly unchanged even at an increased drain-source voltage. Especially, because sub-threshold leakage current is one of the key issues in the MOS device scaling due to reduced threshold voltage, the usage of a Si0.8Ge0.2 layer in n-channel MOSFET was verified to be useful for low power and high performance even under aggressive scaling constraints. (C) 2004 Elsevier Ltd. All rights reserved. | - |
dc.description.sponsorship | This work was supported by NRL (National Research Laboratory) Program under Grant No. M1-0302-00- 0050 of KISTEP organized by the Ministry of Science and Technology, Korea. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | CMOS DEVICES | - |
dc.title | Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier | - |
dc.type | Article | - |
dc.identifier.wosid | 000225855200036 | - |
dc.identifier.scopusid | 2-s2.0-9544253926 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 4-6 | - |
dc.citation.beginningpage | 375 | - |
dc.citation.endingpage | 378 | - |
dc.citation.publicationname | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Mheen, B | - |
dc.contributor.nonIdAuthor | Song, YJ | - |
dc.contributor.nonIdAuthor | Kang, JY | - |
dc.contributor.nonIdAuthor | Shim, KH | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | DIBL | - |
dc.subject.keywordAuthor | transconductance | - |
dc.subject.keywordAuthor | retrograde | - |
dc.subject.keywordAuthor | subthreshold swing | - |
dc.subject.keywordAuthor | drain leakage current | - |
dc.subject.keywordPlus | CMOS DEVICES | - |
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