A study on formation and physico-chemical properties of Pt silicide nanowires on Si(100) surface = Si(100) 표면에서의 백금 실리사이드 나노선 형성 및 물리화학적 성질 연구

Cited 0 time in Cited 0 time in
• Hit : 289
$\bold{Structures and Electronic Properties of Self-assembled Pt Silicide Nanowires on Si(100)$ We investigated the formation of Pt silicide nanowires on a Si(100) surface using scanning tunneling microscopy and high-resolution photoemission spectroscopy. Pt silicide nanowires with a tetragonal Pt2Si structure are formed along the step edges of Si(100). Pt-induced c(4 $\times$ 2) reconstructions also appear adjacent to the tetragonal $Pt_2Si$ nanowires. Formation of the $Pt_2Si$ nanowires is attributed to the anisotropic lattice mismatches between the tetragonal $Pt_2Si$ structure and Si(100). Scanning tunneling spectroscopy data show that the nanowires are metallic. The stoichiometry of Pt silicide is confirmed by high-resolution photoemission spectroscopy. $\bold{Unidirectional Pt Silicide Nanowires Grown on Vicinal Si(100)}$ The formation and electronic properties of unidirectional $Pt_2Si$ nanowires grown on a Si(100)-2° off surface were investigated. We found that $Pt_2Si$ nanowires were formed along the step edge of Si(100)-2° off surface with c(4$\times$6) reconstructions occurred on the terrace of Si(100) using scanning tunneling microscopy and low energy electron diffraction. Stoichiometry of grown nanowires was found to be $Pt_2Si$ by high resolution core-level spectroscopy. Electronic band structures parallel and perpendicular to the nanowire direction are found anisotropic. The surface state induced by $Pt_2Si$ nanowires was also observed in the angle-resolved photoemission spectra taken along the nanowires. A clear free-electron like band dispersion was not observed in the valence level spectra, however, the existence of the density of states at the Fermi energy level indicates that $Pt_2Si$ nanowires are metallic. $\bold{Resistivity Measurement of Pt Silicide Nanowires Using Double-Scanning-Probe Tunneling Microscopy}$ The resistivities of Pt silicide nanowires with the widths less than 10 nm were measured. Pt silicide nanowires consist ...
Kim, Se-Hunresearcher김세훈researcher
Description
한국과학기술원 : 화학과,
Publisher
한국과학기술원
Issue Date
2007
Identifier
268763/325007  / 020035252
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 화학과, 2007. 8, [ vii, 55 p. ]

Keywords

nanowire; Pt silicide; scanning tunneling microscopy; resistivity; angle resolved photoemission spectroscopy; 나노선; 백금 실리사이드; 주사터널링현미경; 비저항; 광전자분광분석; nanowire; Pt silicide; scanning tunneling microscopy; resistivity; angle resolved photoemission spectroscopy; 나노선; 백금 실리사이드; 주사터널링현미경; 비저항; 광전자분광분석

URI
http://hdl.handle.net/10203/31687