Improvement of Surface Morphology of Aluminum Thin Films Grown by Metallorganic Chemical Vapor Deposition

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Surface morphology of aluminum thin films grown by metallorganic chemical vapor deposition has been improved by growing aluminum/titanium nitride multilayers. When the aluminum films were deposited continuously, the reflectance vs. deposition thickness curves showed a maximum reflectance at the completion of coalescence of islands, and then showed a gradual decay with increasing aluminum thickness because of nonuniform grain growth. By inserting 1 nm titanium nitride layer grown by atomic layer deposition on aluminum layer at the maximum reflectance, the reflectance was recovered again to the peak reflectance like a sinusoid waveform. Therefore, without considerable loss of electrical conductivity surface smoothness of aluminum films has been able to be achieved by repeating the aluminum/titanium nitride multilayer depositions. (C) 2000 The Electrochemical Society. S1099-0062(99)10-085-3. All rights reserved.
Publisher
Electrochemical Soc Inc
Issue Date
2000-04
Language
ENG
Article Type
Article
Keywords

METALLIZATION

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.3, no.4, pp.186 - 188

ISSN
1099-0062
URI
http://hdl.handle.net/10203/3163
Appears in Collection
MS-Journal Papers(저널논문)

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