DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Seong-Deok | ko |
dc.contributor.author | Lee, Hyun-Bae | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2008-02-22T09:45:23Z | - |
dc.date.available | 2008-02-22T09:45:23Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-04 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.3, no.4, pp.186 - 188 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3163 | - |
dc.description.abstract | Surface morphology of aluminum thin films grown by metallorganic chemical vapor deposition has been improved by growing aluminum/titanium nitride multilayers. When the aluminum films were deposited continuously, the reflectance vs. deposition thickness curves showed a maximum reflectance at the completion of coalescence of islands, and then showed a gradual decay with increasing aluminum thickness because of nonuniform grain growth. By inserting 1 nm titanium nitride layer grown by atomic layer deposition on aluminum layer at the maximum reflectance, the reflectance was recovered again to the peak reflectance like a sinusoid waveform. Therefore, without considerable loss of electrical conductivity surface smoothness of aluminum films has been able to be achieved by repeating the aluminum/titanium nitride multilayer depositions. (C) 2000 The Electrochemical Society. S1099-0062(99)10-085-3. All rights reserved. | - |
dc.description.sponsorship | The research was supported by the Program for Joint Technology Development Encouraging the Cooperative Linkage among Industries, Universities, and Government Research Institutes and A Collaborative Project for Excellence in System IC Technology. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | METALLIZATION | - |
dc.title | Improvement of Surface Morphology of Aluminum Thin Films Grown by Metallorganic Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000086115300008 | - |
dc.identifier.scopusid | 2-s2.0-0033902417 | - |
dc.type.rims | ART | - |
dc.citation.volume | 3 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 186 | - |
dc.citation.endingpage | 188 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Ahn, Seong-Deok | - |
dc.contributor.nonIdAuthor | Lee, Hyun-Bae | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | METALLIZATION | - |
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