Strong correlation between efficiency and carrier recombination processes in efficiency droop of GaN based light-emitting diodes

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 82
  • Download : 0
We present strong correlation between efficiency droop and carrier recombination rate variation in GaN based light-emitting diodes. And we analyze effect of radiative and nonradiative recombination processes under current injection without assuming any theoretical model.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Issue Date
2015-08
Language
English
Citation

11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

DOI
10.1109/CLEOPR.2015.7376087
URI
http://hdl.handle.net/10203/313103
Appears in Collection
PH-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0