Antiferroelectric PbZrO3 (AFE PZO) films have great potential to be used as the energy storage dielectrics due to the unique electric field (E)-induced phase transition character. However, the phase transition process always accompanies a polarization (P) hysteresis effect that induces the large energy loss (W-loss) and lowers the breakdown strength (E-BDS), leading to the inferior energy storage density (W-rec) as well as low efficiency. In this work, the synergistic strategies by doping smaller ions of Li+-Al3+ to substitute Pb2+ and lowering the annealing temperature (T) from 700 to 550 degrees C are proposed to change the microstructures and tune the polarization characters of PZO films, except to dramatically improve the energy storage performances. The prepared Pb(1-x)(Li0.5Al0.5)(x)ZrO3 (P(1-x)(L(0.5)A(0.5))(x)ZO) films exhibit ferroelectric (FE)-like rather than AFE character once the doping content of Li+-Al3+ ions reaches 6 mol%, accompanying a significant improvement of W-rec of 49.09 J/cm(3), but the energy storage efficiency (eta) is only 47.94% due to the long-correlation of FE domains. Accordingly, the low-temperature annealing is carried out to reduce the crystalline degree and the P loss. P-0.94(L(0.5)A(0.5))(0.06)ZO films annealed at 550 degrees C deliver a linear-like polarization behavior rather than FE-like behavior annealed at 700 degrees C, and the lowered remanent polarization (Pr) as well as improved E-BDS (4814 kV/cm) results in the superior W-rec of 58.7 J/cm(3) and efficiency of 79.16%, simultaneously possessing excellent frequency and temperature stability and good electric fatigue tolerance.