Enhancement of iodine adsorption on ruthenium glue layer for seedless CECVD of Cu

Catalyst-enhanced chemical vapor deposition (CECVD) of copper (Cu) on ruthenium (Ru) layer using iodine as a catalytic-surfactant has been studied for the seedless Cu superfilling of submicron features of trenches and via holes. Hydrogen improved adsorption of iodine by assisting hydrogenation reaction when diiodomethane (CH2I2) vapor was provided onto Ru surface in hydrogen ambient. The iodine adatoms on Ru layer also showed catalytic-surfactant effect on the subsequent CVD of Cu as well as on Cu seed layer. As a result, the superfilling of Cu on submicrometer features was achieved on Ru glue layer without Cu seed layer. (C) 2005 The Electrochemical Society.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2005
Language
ENG
Keywords

CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER; THIN-FILMS; COPPER ELECTRODEPOSITION; BARRIER LAYERS; INTERCONNECTIONS; TEMPERATURE; SURFACE; GROWTH; PLASMA

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.2, pp.C39 - C42

ISSN
1099-0062
DOI
10.1149/1.1850393
URI
http://hdl.handle.net/10203/3059
Appears in Collection
MS-Journal Papers(저널논문)
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