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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Enhancement of iodine adsorption on ruthenium glue layer for seedless CECVD of Cu

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dc.contributor.authorLee, HBko
dc.contributor.authorKwak, DKko
dc.contributor.authorKang, Sang-Wonko
dc.date.accessioned2008-02-18T06:38:10Z-
dc.date.available2008-02-18T06:38:10Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.2, pp.C39 - C42-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/3059-
dc.description.abstractCatalyst-enhanced chemical vapor deposition (CECVD) of copper (Cu) on ruthenium (Ru) layer using iodine as a catalytic-surfactant has been studied for the seedless Cu superfilling of submicron features of trenches and via holes. Hydrogen improved adsorption of iodine by assisting hydrogenation reaction when diiodomethane (CH2I2) vapor was provided onto Ru surface in hydrogen ambient. The iodine adatoms on Ru layer also showed catalytic-surfactant effect on the subsequent CVD of Cu as well as on Cu seed layer. As a result, the superfilling of Cu on submicrometer features was achieved on Ru glue layer without Cu seed layer. (C) 2005 The Electrochemical Society.-
dc.description.sponsorshipThis work was supported by the project of System IC 2010. The Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectATOMIC LAYER-
dc.subjectTHIN-FILMS-
dc.subjectCOPPER ELECTRODEPOSITION-
dc.subjectBARRIER LAYERS-
dc.subjectINTERCONNECTIONS-
dc.subjectTEMPERATURE-
dc.subjectSURFACE-
dc.subjectGROWTH-
dc.subjectPLASMA-
dc.titleEnhancement of iodine adsorption on ruthenium glue layer for seedless CECVD of Cu-
dc.typeArticle-
dc.identifier.wosid000226293900024-
dc.identifier.scopusid2-s2.0-13444269072-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue2-
dc.citation.beginningpageC39-
dc.citation.endingpageC42-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.identifier.doi10.1149/1.1850393-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKang, Sang-Won-
dc.contributor.nonIdAuthorLee, HB-
dc.contributor.nonIdAuthorKwak, DK-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusATOMIC LAYER-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusCOPPER ELECTRODEPOSITION-
dc.subject.keywordPlusBARRIER LAYERS-
dc.subject.keywordPlusINTERCONNECTIONS-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusPLASMA-
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