E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs

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An increase in the number of the through-silicon vies (TSVs) per unit area causes the electrical channel in neighboring semiconductor devices to be closer to the depletion region induced by the electric-field (E-field) around the TSV. A keep-out zone (KOZ) is required to ensure the proper operation of three-dimensional integrated circuits (3-D ICs) using TSVs given these negative effects. The proposed method with which to determine the KOZ for 3-D ICs includes procedures for extracting the charges produced during the TSV formation process and for calculating the depletion region from a nonlinear metal-oxide-semiconductor (MOS) capacitance model. The results of a comparison of the proposed method with a previous method show that the charge carriers in the depletion region and charge-type imperfections of in TSV must be considered for an accurate KOZ.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2019-07
Language
English
Article Type
Article
Citation

MICROELECTRONICS RELIABILITY, v.98, pp.161 - 164

ISSN
0026-2714
DOI
10.1016/j.microrel.2019.05.007
URI
http://hdl.handle.net/10203/263295
Appears in Collection
GT-Journal Papers(저널논문)
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