DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kibeom | ko |
dc.contributor.author | Choi, Junsung | ko |
dc.contributor.author | Woo, Seongho | ko |
dc.contributor.author | Cho, Jaeyong | ko |
dc.contributor.author | Ahn, Seungyoung | ko |
dc.date.accessioned | 2019-07-18T05:31:15Z | - |
dc.date.available | 2019-07-18T05:31:15Z | - |
dc.date.created | 2019-07-15 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | MICROELECTRONICS RELIABILITY, v.98, pp.161 - 164 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | http://hdl.handle.net/10203/263295 | - |
dc.description.abstract | An increase in the number of the through-silicon vies (TSVs) per unit area causes the electrical channel in neighboring semiconductor devices to be closer to the depletion region induced by the electric-field (E-field) around the TSV. A keep-out zone (KOZ) is required to ensure the proper operation of three-dimensional integrated circuits (3-D ICs) using TSVs given these negative effects. The proposed method with which to determine the KOZ for 3-D ICs includes procedures for extracting the charges produced during the TSV formation process and for calculating the depletion region from a nonlinear metal-oxide-semiconductor (MOS) capacitance model. The results of a comparison of the proposed method with a previous method show that the charge carriers in the depletion region and charge-type imperfections of in TSV must be considered for an accurate KOZ. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs | - |
dc.type | Article | - |
dc.identifier.wosid | 000472692700021 | - |
dc.identifier.scopusid | 2-s2.0-85066241264 | - |
dc.type.rims | ART | - |
dc.citation.volume | 98 | - |
dc.citation.beginningpage | 161 | - |
dc.citation.endingpage | 164 | - |
dc.citation.publicationname | MICROELECTRONICS RELIABILITY | - |
dc.identifier.doi | 10.1016/j.microrel.2019.05.007 | - |
dc.contributor.localauthor | Ahn, Seungyoung | - |
dc.contributor.nonIdAuthor | Kim, Kibeom | - |
dc.contributor.nonIdAuthor | Choi, Junsung | - |
dc.contributor.nonIdAuthor | Woo, Seongho | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Through-silicon via (TSV) | - |
dc.subject.keywordAuthor | Three-dimensional integrated circuit (3-D IC) | - |
dc.subject.keywordAuthor | Metal-oxide-semiconductor (MOS) | - |
dc.subject.keywordAuthor | Keep-out zone (KOZ) | - |
dc.subject.keywordPlus | LATERAL NONUNIFORMITY | - |
dc.subject.keywordPlus | EXTRACTION | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.