DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, Hocheon | ko |
dc.contributor.author | Park, Hongkeun | ko |
dc.contributor.author | Yoo, Seunghyun | ko |
dc.contributor.author | On, Sungmin | ko |
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Kim, Jae-Joon | ko |
dc.date.accessioned | 2019-06-19T01:10:04Z | - |
dc.date.available | 2019-06-19T01:10:04Z | - |
dc.date.created | 2019-06-18 | - |
dc.date.created | 2019-06-18 | - |
dc.date.created | 2019-06-18 | - |
dc.date.created | 2019-06-18 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | NATURE COMMUNICATIONS, v.10, no.1, pp.2424 | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.uri | http://hdl.handle.net/10203/262727 | - |
dc.description.abstract | Multilevel metal interconnects are crucial for the development of large-scale organic integrated circuits. In particular, three-dimensional integrated circuits require a large number of vertical interconnects between layers. Here, we present a novel multilevel metal interconnect scheme that involves solvent-free patterning of insulator layers to form an interconnecting area that ensures a reliable electrical connection between two metals in different layers. Using a highly reliable interconnect method, the highest stacked organic transistors to date, a three-dimensional organic integrated circuits consisting of 5 transistors and 20 metal layers, is successfully fabricated in a solvent-free manner. All transistors exhibit outstanding device characteristics, including a high on/off current ratio of similar to 10(7), no hysteresis behavior, and excellent device-to-device uniformity. We also demonstrate two vertically-stacked complementary inverter circuits that use transistors on 4 different floors. All circuits show superb inverter characteristics with a 100% output voltage swing and gain up to 35 V per V. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects | - |
dc.type | Article | - |
dc.identifier.wosid | 000469909800008 | - |
dc.identifier.scopusid | 2-s2.0-85066616567 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 2424 | - |
dc.citation.publicationname | NATURE COMMUNICATIONS | - |
dc.identifier.doi | 10.1038/s41467-019-10412-9 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.nonIdAuthor | Yoo, Hocheon | - |
dc.contributor.nonIdAuthor | Yoo, Seunghyun | - |
dc.contributor.nonIdAuthor | On, Sungmin | - |
dc.contributor.nonIdAuthor | Seong, Hyejeong | - |
dc.contributor.nonIdAuthor | Kim, Jae-Joon | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | COMPLEMENTARY INVERTERS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | DNTT | - |
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